| 摘要 |
<p>A method for manufacturing a semiconductor device, the method comprising encapsulating a semiconductor chip (10) with resin (20), and then removing the resin by irradiation with a laser light (L), so as to expose a portion (2) of the semiconductor chip; wherein a product is prepared as the semiconductor chip comprising a material having lower absorptivity of laser light than that of the resin, and not being melted by the laser light. The laser light has a wavelength at which the laser light passes through the semiconductor chip, and at which the absorptivity of the laser light by the semiconductor chip is less than that by the resin, the laser light being radiated from one plate-surface (11) side of the semiconductor chip onto the resin, thereby sublimating and removing the resin encapsulating the plate-surface side. Subsequently the laser light is caused to pass through to the other plate-surface (12) side of the semiconductor chip, the transmitted laser light sublimating away at least a portion of the resin encapsulating the other plate-surface side.</p> |
