| 摘要 |
<p>The invention relates to a semiconductor structure (100, 100a, 100b) able to receive electromagnetic radiation and convert it into an electrical signal, such a structure (100, 100a, 100b) comprising a semiconductor substrate (150) having a first surface (151) defining a longitudinal plane, and a first zone (110, 110a, 110b) of a first conductivity type housed in the substrate (150) with a second zone (120, 120a, 120b) of a second, opposite conductivity type, in order to form a semiconductor junction. A means for limiting lateral current is provided and comprises a third zone (130) housed in the substrate and making lateral contact with the second zone (120, 120a, 120b), said third zone (130) being of the second conductivity type, the majority carriers of which are electrons. The third zone (130) has a sufficiently high majority carrier concentration to increase the bandgap via the Moss-Burstein effect.</p> |
