| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor element which can reduce a threshold current value while achieving a high optical gain, and provide a manufacturing method of the optical semiconductor element. <P>SOLUTION: An optical semiconductor element comprises: a plurality of quantum dot layers 12 formed above a substrate; and intermediate layers positioned among the plurality of quantum dot layers 12. A composition of a quantum dot 12a included in the quantum dot layer 12 is represented as In<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>As<SB POS="POST">y</SB>Sb<SB POS="POST">1-y</SB>(0<x≤1, 0<y≤1). The intermediate layer includes: InGaAsP layers 13, 15 in which a composition of each is represented as In<SB POS="POST">a</SB>Ga<SB POS="POST">1-a</SB>As<SB POS="POST">b</SB>P<SB POS="POST">1-b</SB>(0<a<1, 0<b<1) and each has a thickness of not less then 10 nm and not more than 40 nm; and an InP layer 14 positioned at a height of not less than 10 nm and less than 40 nm from bottoms of the InGaAsP layers 13, 15 and having a thickness of not less than 0.3 nm and not more than 2 nm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
