| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method and a formation apparatus of a silicon oxide film, which can simply and selectively form a silicon oxide film only on an outer peripheral part of a silicon wafer in a shorter time, and to provide a silicon wafer polishing method which can achieve high productivity and improve both of SFQR (Site Front Least Squares Range) and ESFQR (Edge SFQR). <P>SOLUTION: A silicon oxide film formation method of forming a silicon oxide film on a circular silicon wafer on an outer peripheral part of a silicon wafer surface so as to expose the silicon wafer surface on a central part of the silicon wafer surface, comprises: holding the silicon wafer by a rotary table; and forming the silicon oxide film with rotating the silicon wafer held by the rotary table by supplying ozone water to the outer peripheral part of the silicon wafer surface and supplying pure water to the central part of the silicon wafer surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
