发明名称 FORMATION METHOD OF CONTACT HOLE AND MANUFACTURING METHOD OF ELECTRO-OPTIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a formation method of a contact hole capable of forming a plurality of recesses available as contact holes with different depth in single resist mask process by using the shrink technology, and to provide a manufacturing method of an electro-optic device. <P>SOLUTION: When forming a contact hole in the element substrate 10 of an electro-optic device, a resist mask 17 having a first aperture 17a and a second aperture 17b is formed, at first, on the surface of an interlayer insulating film 42, and then the interlayer insulating film 42 and an insulating film 49 are etched from the first aperture 17a and the second aperture 17b. Subsequently, in a shrink step, the second aperture 17b is closed by deforming the resist mask 17, and the aperture area of the first aperture 17a is narrowed. Thereafter, an interlayer insulating film 41 and a gate insulating layer 2 are etched from the first aperture 17a. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013110251(A) 申请公布日期 2013.06.06
申请号 JP20110253723 申请日期 2011.11.21
申请人 SEIKO EPSON CORP 发明人 IIZUKA SHOTA
分类号 H01L21/768;G02F1/1368;H01L21/28;H01L21/3065;H01L21/336;H01L29/786 主分类号 H01L21/768
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