| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a material suitable for semiconductor applications such as a transistor and a diode. <P>SOLUTION: The material is an oxide material including In, M1, M2 and Zn, in which M1 is a group 13 element, typically Ga, and M2 is an element whose content is less than the content of M1. Examples of M2 are Ti, Zr, Hf, Ge, Sn, and the like. Containing M2 can suppress generation of oxygen vacancies in the oxide semiconductor material. If a transistor is realized which hardly contains oxygen vacancies, reliability of a semiconductor device can be increased. <P>COPYRIGHT: (C)2013,JPO&INPIT |
