发明名称 TSV Structures and Methods for Forming the Same
摘要 A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
申请公布号 US2013140690(A1) 申请公布日期 2013.06.06
申请号 US201113311692 申请日期 2011.12.06
申请人 LIN YUNG-CHI;CHEN HSIN-YU;CHIOU WEN-CHIH;YANG KU-FENG;WU TSANG-JIUH;LIN JING-CHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN YUNG-CHI;CHEN HSIN-YU;CHIOU WEN-CHIH;YANG KU-FENG;WU TSANG-JIUH;LIN JING-CHENG
分类号 H01L23/498;H01L21/768 主分类号 H01L23/498
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