发明名称 |
TSV Structures and Methods for Forming the Same |
摘要 |
A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
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申请公布号 |
US2013140690(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201113311692 |
申请日期 |
2011.12.06 |
申请人 |
LIN YUNG-CHI;CHEN HSIN-YU;CHIOU WEN-CHIH;YANG KU-FENG;WU TSANG-JIUH;LIN JING-CHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN YUNG-CHI;CHEN HSIN-YU;CHIOU WEN-CHIH;YANG KU-FENG;WU TSANG-JIUH;LIN JING-CHENG |
分类号 |
H01L23/498;H01L21/768 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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