发明名称 BURIED WORD LINE AND METHOD FOR FORMING BURIED WORD LINE IN SEMICONDUCTOR DEVICE
摘要 A buried word line includes a substrate having thereon a recessed trench, an insulating layer on a bottom surface and a sidewall of the recessed trench, and a lining layer in the recessed trench. The lining layer has a cleaned surface that is cleaned by a cleaning solution comprising HF or H3PO4. A tungsten layer is selectively deposited on the cleaned surface of the lining layer.
申请公布号 US2013140682(A1) 申请公布日期 2013.06.06
申请号 US201113309523 申请日期 2011.12.01
申请人 HUANG CHI-WEN;SU KUO-HUI 发明人 HUANG CHI-WEN;SU KUO-HUI
分类号 H01L29/06;H01L21/336 主分类号 H01L29/06
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