| 摘要 |
A method of manufacturing a pattern structure, the method includes sequentially forming a mold layer and a mask layer on a substrate, patterning the mask layer to form a mask having a plurality of first and second holes located at vertices of hexagons that form a honeycomb structure, forming filling layer patterns in the first and second holes, removing the mask, forming a spacer on sidewalls of the filling layer patterns and the spacer has a plurality of third holes at centers of the hexagons, removing the filling layer patterns to form an etching mask including the spacer, and etching the mold layer using the etching mask to form the pattern structure having a plurality of openings located at the vertices and the centers of the hexagons.
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