发明名称 SPIN TRANSFER TORQUE MAGNETIC STORAGE ELEMENT WITH LOW WRITE ERROR RATE
摘要 A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.
申请公布号 WO2013080482(A1) 申请公布日期 2013.06.06
申请号 WO2012JP07416 申请日期 2012.11.19
申请人 SONY CORPORATION 发明人 HIGO, YUTAKA;HOSOMI, MASANORI;OHMORI, HIROYUKI;BESSHO, KAZUHIRO;ASAYAMA, TETSUYA;YAMANE, KAZUTAKA;UCHIDA, HIROYUKI
分类号 H01F10/32;G11C11/16 主分类号 H01F10/32
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