IR photodetectors with high detectivity at low drive voltage
摘要
An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.
申请公布号
AU2011332300(A1)
申请公布日期
2013.06.06
申请号
AU20110332300
申请日期
2011.10.13
申请人
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
发明人
SO, FRANKY;KIM, DO YOUNG;SARASQUETA, GALILEO;PRADHAN, BHABENDRA K.