| 摘要 |
An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.
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