发明名称 |
ETCH RESISTANT ALUMINA BASED COATINGS |
摘要 |
Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.
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申请公布号 |
US2013143408(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201013638075 |
申请日期 |
2010.03.29 |
申请人 |
RANTALA JUHA T;GAEDDA THOMAS;LI WEI-MIN;THOMAS DAVID A.;MCLAUGHLIN WILLIAM;SILECS OY |
发明人 |
RANTALA JUHA T;GAEDDA THOMAS;LI WEI-MIN;THOMAS DAVID A.;MCLAUGHLIN WILLIAM |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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