METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided. The method comprises: forming gate structures (300,310) on substrates (100,110) containing silicon elements; depositing nickel-base metal layers (600,610) on the substrates and the gate structures; performing a first annealing, so as to react silicon in the substrates with the nickel-base metal layers to form nickel-rich phase metal silicide (700,710); performing ion implantation, to implant dopants into the nickel-rich metal silicide; performing a second annealing, so as to transform the nickel-rich metal silicide into a nickel-base metal silicide source and drain (701,711), while forming dopants segregation regions(800,810) at the interface between the nickel-base metal silicide source and drain and the substrates. According the method, by means of implanting dopants to the nickel-rich metal silicide and then performing the annealing, the solid solubility of the dopants is improved and dopants segregation regions of higher concentration are formed, thereby effectively reducing the schottky barrier height between the nickel-base metal silicide and the silicon channel, and improving driving capability of the device.