| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which responds to microfabrication. <P>SOLUTION: A semiconductor device manufacturing method forms first and second element isolation regions in a first region of a semiconductor substrate so as to be arranged alternately in a first direction. At this time, the first and second element isolation regions are formed such that a lateral face of the element isolation region of at least one of the first and second element isolation regions does not become perpendicular to a principal surface of the semiconductor substrate. The semiconductor device manufacturing method removes upper parts of the first and second element isolation regions to form the semiconductor substrate between the first element isolation regions and the second element isolation regions as a fin. <P>COPYRIGHT: (C)2013,JPO&INPIT |
