发明名称 |
Methods and Apparatus for FinFET SRAM Cells |
摘要 |
Methods and apparatus for providing finFET SRAM cells. An SRAM cell structure is provided including a central N-well region and a first and a second P-well region on opposing sides of the central N-well region, having an area ratio of the N-well region to the P-well regions between 80-120%, the SRAM cell structure further includes at least one p-type transistor formed in the N-well region and having a gate electrode comprising a gate and a gate dielectric over a p-type transistor active area in the N-well region; and at least one n-type transistor formed in each of the first and second P-well regions and each n-type transistor having a gate electrode comprising a gate and a gate dielectric over an n-type transistor active area in the respective P-well region. Methods for operating the SRAM cell structures are disclosed. |
申请公布号 |
US2013141963(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201113312828 |
申请日期 |
2011.12.06 |
申请人 |
LIAW JHON-JHY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIAW JHON-JHY |
分类号 |
G11C11/34;H01L21/8244;H01L27/092 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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