BRIDGE DIE POLYSILICON THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A bridge die polysilicon thin-film transistor comprises an active layer formed of a low temperature polysilicon semiconductor material. The active layer is provided with a plurality of transverse conductive bridges. The transverse conductive bridge is vertical to a flow direction of a current required in a trench region, and is parallel to a flow direction of a current required in source/drain region. By means of anisotropy of the transverse conductive bridge, the source/drain doping can be omitted, thereby simplifying the manufacturing process.