发明名称 |
TRANSFER SUBSTRATE FOR METAL WIRING FORMATION, AND METHOD FOR METAL WIRING FORMATION WITH TRANSFER SUBSTRATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a transfer substrate for forming a piece of metal wiring on a transfer object according to a transfer technique which allows the lowering of a heating temperature on the side of the transfer object; and a method for metal wiring formation. <P>SOLUTION: The transfer substrate is for transferring a metal wiring material to a transfer object. The transfer substrate comprises: a base; at least one metal wiring material formed on the base; a coating layer composed of at least one layer formed on a surface of the metal wiring material; and a base metal film formed between the base and the metal wiring material. The metal wiring material is a sintered compact formed by sintering powdered metal such as gold powder with a purity of 99.9 wt.% or higher and an average particle diameter of 0.01-1.0 μm. The coating layer is made of a predetermined metal such as gold or an alloy thereof which is different from the metal wiring material in composition, and the coating layer has a total thickness of 1 μm or smaller. The base metal film is a transfer substrate made of a predetermined metal such as gold or an alloy thereof. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013110174(A) |
申请公布日期 |
2013.06.06 |
申请号 |
JP20110252138 |
申请日期 |
2011.11.18 |
申请人 |
TANAKA KIKINZOKU KOGYO KK |
发明人 |
KOGASHIWA TOSHINORI;KURITA MASAAKI;NISHIMORI TAKASHI;KANEHIRA YUKIO |
分类号 |
H05K3/20;H01L23/12;H01L23/14;H05K1/09 |
主分类号 |
H05K3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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