发明名称 |
SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS |
摘要 |
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.
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申请公布号 |
US2013140615(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201313746402 |
申请日期 |
2013.01.22 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
KRAMER STEPHEN J.;SANDHU GURTEJ S. |
分类号 |
H01L43/02 |
主分类号 |
H01L43/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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