| 摘要 |
In one embodiment, the invention provides a memory system including a flash memory device including a plurality of memory blocks implementing a plurality of data blocks, a plurality of log blocks, and a plurality of free blocks. The memory system further includes a flash translation layer maintaining the number of the free blocks to be at least equal to a reference number by converting selected memory blocks among the data and log blocks into free blocks via at least one merge operation during a background period. Additionally, the flash translation layer converts selected ones of the free blocks into data and log blocks, respectively.
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