发明名称 METHODS FOR ATOMIC LAYER ETCHING
摘要 <p>Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.</p>
申请公布号 WO2013082084(A1) 申请公布日期 2013.06.06
申请号 WO2012US66757 申请日期 2012.11.28
申请人 APPLIED MATERIALS, INC.;CHANG, MEI;YUDOVSKY, JOSEPH 发明人 CHANG, MEI;YUDOVSKY, JOSEPH
分类号 H01L21/311;H01L21/205;H01L21/3065 主分类号 H01L21/311
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