<p>Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.</p>
申请公布号
WO2013082084(A1)
申请公布日期
2013.06.06
申请号
WO2012US66757
申请日期
2012.11.28
申请人
APPLIED MATERIALS, INC.;CHANG, MEI;YUDOVSKY, JOSEPH