| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of removing a silicon-containing layer in which a silicon oxide layer or a silicon nitride layer is formed in a side wall part without causing a residue and a loss in a lower layer film, and manufacturing a good-quality semiconductor device. <P>SOLUTION: A manufacturing method for a semiconductor device comprises the steps of: forming a silicon oxide layer or a silicon nitride layer so as to cover the side wall part of the patterned silicon-containing layer formed on a substrate by the silicon nitride layer or the silicon oxide layer; and leaving the silicon nitride layer or the silicon oxide layer formed in the side wall part by selectively removing the silicon-containing layer (plasma etching step). The plasma etching step uses an etching gas including a SF<SB POS="POST">6</SB>gas. <P>COPYRIGHT: (C)2013,JPO&INPIT |
