| 摘要 |
<P>PROBLEM TO BE SOLVED: To selectively texturize a GaN LED layer using patterning of a resist layer. <P>SOLUTION: In a method for producing a GaN LED device, a stack of layers comprising at least a GaN layer is texturized. The method comprises the steps of: providing a substrate comprising on its surface the stack of layers; depositing a resist layer directly on the stack of layers; positioning a mask above the resist layer, the mask covering one or more first portions of the resist layer and not covering one or more second portions of the resist layer; exposing the second portions of the resist layer to a light source; removing the mask; and bringing the resist layer into contact with a developer comprising potassium. The developer removes the resist portions that have been exposed and texturizes the surface of at least the top layer of the stack, by wet etching the surface in the areas situated underneath the resist portions that have been exposed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
