| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which reduction in channel mobility and generation of punch-through can be suppressed and which can be efficiently manufactured, and a manufacturing method of the same. <P>SOLUTION: A MOSFET 1 comprises: a substrate 10 on which a trench 20 having a side wall surface 20A in which an off angle with respect to a ä0001} plane is not less than 50° and not more than 65° is formed; an oxide film 30; and a gate electrode 40. The substrate 10 includes a source region 14, a body region 13, and a drift region 12 formed so as to sandwich the body region 13 between the source region 14 and the drift region 12. The source region 14 and the body region 13 are formed by ion implantation. At the body region 13, a thickness of an internal region 13A sandwiched by the source region 14 and the drift region 12 in a direction perpendicular to a principal surface 10A is 1 μm and under. An impurity concentration in the body region 13 is 3×10<SP POS="POST">17</SP>cm<SP POS="POST">-3</SP>and over. <P>COPYRIGHT: (C)2013,JPO&INPIT |
