发明名称 Field-Effect Device and Manufacturing Method Thereof
摘要 Embodiments relate to a field-effect device that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.
申请公布号 US2013140626(A1) 申请公布日期 2013.06.06
申请号 US201313740048 申请日期 2013.01.11
申请人 INFINEON TECHNOLOGIES AG;INFINEON TECHNOLOGIES AG 发明人 SHRIVASTAVA MAYANK;GOSSNER HARALD;RAO RAMGOPAL;SHOJAEI BAGHINI MARYAM
分类号 H01L29/78;H01L29/66 主分类号 H01L29/78
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