Method for producing gemstones from silicon carbide

摘要

The invention relates to cultivating and processing monocrystals. Silicon carbide produced by the given method can be used not only for the electronic industry and for jewellery-making but also as glass or a housing for watches. The method comprises simultaneously cultivating a multiplicity of moissanite crystal blanks in a honeycomb mould of moulding graphite, separating said blanks into individual crystals, and faceting, grinding and polishing said crystals. Before the faceting, grinding and polishing, an operation is carried out to label the blanks for faceting and then to relabel the blanks on the reverse side thereof. Polishing is carried out by polishing the moissanite on a ceramic wheel rotating at a rate of 200 to 300 rpm, with the use of diamond powder (spray) with a grain size of 0.125 to 0.45 μm, ensuring a graduation line depth of less than the length of a light wave in the visible part of the spectrum, wherein the cut and cleaved edges and defective blanks unsuitable for faceting are pulverized and returned to the cultivation stage.