| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element manufacturing method and a photoelectric conversion element. <P>SOLUTION: A photoelectric conversion element manufacturing method comprises: a step of forming a first conductivity type semiconductor layer 120 on a semiconductor substrate 110 by using a first impurity; a high-concentration doping-edge isolation step of performing high-concentration doping to a partial region of the first conductivity type semiconductor layer 120 by using laser beams, and forming a groove 170 on an edge of a back face of the semiconductor substrate 110; a step of forming an antireflection film 130 on a front face of the semiconductor substrate 110; a step of forming a first metal electrode 140 on the front face of the semiconductor substrate 110; and a step of forming on the back face of the semiconductor substrate 110, a second conductivity type semiconductor layer 150 including a second impurity having a conductivity type different from that of the first impurity, and a second metal electrode 160. <P>COPYRIGHT: (C)2013,JPO&INPIT |
