发明名称 SEMICONDUCTOR DIE CONTACT STRUCTURE AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a better buffer to a dielectric layer disposed at metalization layers of a semiconductor device. <P>SOLUTION: A semiconductor device comprises: a substrate comprising a plurality of dielectric layers and conductive layers; a metal contact electrically connected to one of top layers of the plurality of conductive layers and having thickness larger than about 15,000 &angst;; and a connector electrically connected to the metal contact. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013110443(A) 申请公布日期 2013.06.06
申请号 JP20130048132 申请日期 2013.03.11
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 LIU CHUNG-SHI;YU CHEN-HUA
分类号 H01L21/60 主分类号 H01L21/60
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