发明名称 |
SEMICONDUCTOR DIE CONTACT STRUCTURE AND METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a better buffer to a dielectric layer disposed at metalization layers of a semiconductor device. <P>SOLUTION: A semiconductor device comprises: a substrate comprising a plurality of dielectric layers and conductive layers; a metal contact electrically connected to one of top layers of the plurality of conductive layers and having thickness larger than about 15,000 Å; and a connector electrically connected to the metal contact. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013110443(A) |
申请公布日期 |
2013.06.06 |
申请号 |
JP20130048132 |
申请日期 |
2013.03.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
LIU CHUNG-SHI;YU CHEN-HUA |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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