发明名称 |
MONOLITHIC SEMICONDUCTOR SWITCHES AND METHOD FOR MANUFACTURING |
摘要 |
A semiconductor device and method are disclosed. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type channel FET are electrically coupled to at least one contact area at a first side. A drain of the first n-type channel FET, a gate of the first n-type channel FET, a source of the second n-type channel FET and the gate of the second n-type channel FET are electrically coupled to contact areas at a second side. Contact areas of the first n-type channel FET and the second n-type channel FET are electrically separated from each other.
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申请公布号 |
US2013140673(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201213487999 |
申请日期 |
2012.06.04 |
申请人 |
HAEBERLEN OLIVER;RIEGER WALTER;VIELEMEYER MARTIN;GOERGENS LUTZ;POELZL MARTIN;PAOLUCCI MILKO;SCHOISWOHL JOHANNES;KRUMREY JOACHIM;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HAEBERLEN OLIVER;RIEGER WALTER;VIELEMEYER MARTIN;GOERGENS LUTZ;POELZL MARTIN;PAOLUCCI MILKO;SCHOISWOHL JOHANNES;KRUMREY JOACHIM |
分类号 |
H01L23/495 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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