发明名称 METHOD FOR MAKING LIGHT EMITTING DIODE
摘要 A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.
申请公布号 US2013143340(A1) 申请公布日期 2013.06.06
申请号 US201213479229 申请日期 2012.05.23
申请人 ZHU ZHEN-DONG;LI QUN-QING;ZHANG LI-HUI;CHEN MO;FAN SHOU-SHAN;HON HAI PRECISION INDUSTRY CO., LTD.;TSINGHUA UNIVERSITY 发明人 ZHU ZHEN-DONG;LI QUN-QING;ZHANG LI-HUI;CHEN MO;FAN SHOU-SHAN
分类号 H01L33/06;B82Y40/00 主分类号 H01L33/06
代理机构 代理人
主权项
地址