发明名称 |
METHOD FOR MAKING LIGHT EMITTING DIODE |
摘要 |
A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.
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申请公布号 |
US2013143340(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201213479229 |
申请日期 |
2012.05.23 |
申请人 |
ZHU ZHEN-DONG;LI QUN-QING;ZHANG LI-HUI;CHEN MO;FAN SHOU-SHAN;HON HAI PRECISION INDUSTRY CO., LTD.;TSINGHUA UNIVERSITY |
发明人 |
ZHU ZHEN-DONG;LI QUN-QING;ZHANG LI-HUI;CHEN MO;FAN SHOU-SHAN |
分类号 |
H01L33/06;B82Y40/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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