发明名称 |
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY |
摘要 |
Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.
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申请公布号 |
US2013141966(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201113701257 |
申请日期 |
2011.05.26 |
申请人 |
OHNO HIDEO;IKEDA SHOJI;MATSUKURA FUMIHIRO;ENDOH MASAKI;KANAI SHUN;MIURA KATSUYA;YAMAMOTO HIROYUKI |
发明人 |
OHNO HIDEO;IKEDA SHOJI;MATSUKURA FUMIHIRO;ENDOH MASAKI;KANAI SHUN;MIURA KATSUYA;YAMAMOTO HIROYUKI |
分类号 |
G11C11/16;H01L43/02 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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