| 摘要 |
<p>A semiconductor device that is one embodiment of the present invention is provided with: a semiconductor layer (120A) having a channel region (121) and contact regions (122, 123); a first conductive layer pattern (141) disposed at a position superimposed on the channel region (121); a gate line (18) connected to the first conductive layer pattern (141) and formed from one of either a second conductive layer or a third conductive layer; and a source line (17) connected to the contact regions (122, 123) and formed from the other of either the second conductive layer or the third conductive layer.</p> |
