摘要 |
<p>A thin film transistor (10) of the present invention is provided with: a substrate (1); a gate electrode (2) formed on the substrate (1); a gate insulating layer (3) formed on the gate electrode (2); a channel layer (4) above the gate electrode (2), said channel layer being formed on the gate insulating layer (3); a source electrode (9S) and a drain electrode (9D), which are formed above the channel layer (4); and barrier layers (8), which are respectively formed between the channel layer (4) and the source electrode (9S), and between the channel layer (4) and the drain electrode (9D). The source electrode (9S) and the drain electrode (9D) are configured of a metal containing copper, and the barrier layers (8) are layers containing nitrogen and molybdenum, and have a density of 7.5-10.5 (g/cm3).</p> |