| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for improving reliability and production yield of a semiconductor device by reducing variation in electric characteristics at a connection hole part. <P>SOLUTION: A semiconductor device manufacturing method comprises: placing a semiconductor wafer SW on a wafer state 57a included in a chamber 57 for dry-cleaning processing of a deposition device; subsequently, performing dry-cleaning processing on a principal surface of the semiconductor wafer SW by supplying a reduction gas; subsequently, performing a heat treatment on the semiconductor wafer SW at a first temperature from 100°C to 150°C by using a shower head 57c maintained at a temperature of 180°C; subsequently, vacuum transferring the semiconductor wafer SW from the chamber 57 to a chamber for a heat treatment; and performing the heat treatment on the semiconductor wafer SW in the chamber for the heat treatment at a second temperature from 150°C to 400°C to remove a product material remaining on the principal surface of the semiconductor wafer SW. <P>COPYRIGHT: (C)2013,JPO&INPIT |
