发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To realize a small-sized current sensor with a high sensitivity and a high precision that can detect a magnetic field generated due to a current by integration with use of a compound semiconductor circuit. <P>SOLUTION: A semiconductor circuit (LSI circuit) and a compound semiconductor circuit (compound semiconductor element having a hole element) are formed on a substrate, and an electric wiring is further formed immediately on the compound semiconductor element. The wiring is a metal wiring having a horseshoe shape to increase a magnetic flux density to the compound semiconductor circuit. A detected current is applied to the electric wiring. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013108877(A) 申请公布日期 2013.06.06
申请号 JP20110254892 申请日期 2011.11.22
申请人 ASAHI KASEI ELECTRONICS CO LTD 发明人 KUNIMI HITOHISA
分类号 G01R15/20;H01L43/06 主分类号 G01R15/20
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