发明名称 |
FIELD-EFFECT TRANSISTOR HAVING BACK GATE AND METHOD OF FABRICATING THE SAME |
摘要 |
A back-bias region is disposed on a substrate. A buried insulating layer covers the substrate and the back-bias region. A body is formed on the buried insulating layer and partially overlaps the back-bias region. A drain is in contact with the body. A gate electrode covers top and lateral surfaces of the body.
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申请公布号 |
US2013140612(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201213554066 |
申请日期 |
2012.07.20 |
申请人 |
SUN MIN-CHUL;PARK BYUNG-GOOK;SNU R&DB FOUNDATION;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SUN MIN-CHUL;PARK BYUNG-GOOK |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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