| 摘要 |
In one embodiment, a Super Junction metal oxide semiconductor field effect transistor (MOSFET) device can include a substrate and a charge compensation region located above the substrate. The charge compensation region can include a plurality of columns of P type dopant within an N type dopant region. In addition, the Super Junction MOSFET can include a termination region located above the charge compensation region and the termination region can include an N- type dopant. Furthermore, the Super Junction MOSFET can include an edge termination structure. The termination region includes a portion of the edge termination structure.
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