| 摘要 |
A MONOS Charge-Trapping flash (CTF), with record thinnest 3.6 nm ENT trapping layer, has a large 3.1V 10-year extrapolated retention window at 125° C. and excellent 106 endurance at a fast 100 is and ±16 V program/erase. This is achieved using As+-implanted higher kappa trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125° C. A MoN-[SiO2-LaAlO3]-[Ge-HfON]-[LaAlO3-SiO2]-Si CTF device is also provided with record-thinnest 2.5-nm Equivalent-Si3N4-Thickness (ENT) trapping layer, large 4.4 V initial memory window, 3.2 V 10-year extrapolated retention window at 125° C., and 3.6 V endurance window at 106 cycles, under very fast 100 mus and low ±16 V program/erase. These were achieved using Ge reaction with HfON trapping layer for better charge-trapping and retention.
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