SILICON SUBSTRATE, EPITAXIAL STRUCTURE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SILICON SUBSTRATE

摘要

Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that the directions of crystal faces in the crack reducing portion are randomly oriented.