EPITAXY TECHNIQUE FOR GROWING SEMICONDUCTOR COMPOUNDS
摘要
<p>A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.</p>
申请公布号
WO2013082592(A1)
申请公布日期
2013.06.06
申请号
WO2012US67590
申请日期
2012.12.03
申请人
SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人
JAIN, RAKESH;SUN, WENHONG;YANG, JINWEI;SHATALOV, MAXIM, S.;DOBRINSKY, ALEXANDER;GASKA, REMIGIJUS;SHUR, MICHAEL