PROCESS FOR FILLING DEEP TRENCHES IN A SEMICONDUCTOR MATERIAL BODY

摘要

A process for manufacturing a semiconductor device envisages the steps of: providing a semiconductor material body having at least one deep trench that extends through said body of semiconductor material starting from a top surface thereof; and filling the deep trench via an epitaxial growth of semiconductor material, thereby forming a columnar structure within the body of semiconductor material. The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench; in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth.