| 摘要 |
873,043. Transistors. SIEMENS & HALSKE A.G. Oct. 14, 1959 [Oct. 15, 1958], No. 34802/59. Class 37. In a method of connecting leads 10, 11, 13 to electrodes 2, 3, 14 on a semi-conductor body 1, a metal lamina 5 is mechanically and electrically secured to the electrodes and leads, and portions 12 of the lamina are removed so that each of the leads is electrically connected only to a respective one of the electrodes. As shown, two indium pellets 2, 3 and an annular base electrode 14 are first alloyed into a germanium disc 1, and the collector area 3 is placed on a gold-coated copper plate 7 which is mounted on iron baseplate 8. The gold-coated lamina 5 is then secured by soft solder to the electrodes and leads, the temperature required for this being below the alloying temperature but above the melting-point of the pellets 2, 3, so that the inclined areas of plate 7 are coated with indium. A metal cap is then welded to base-plate 8 to form a vacuum-tight enclosure for the semiconductor component. In an alternative arrangement the base-plate 8 is omitted, leads for electrodes 2, 14 being fitted with glass and iron rings and sealed through plate 7, an exhaust tube also being provided for introducing a protective gas into the housing. The base electrode 14 may be formed with an extension which is passed through the lamina 5 to clamp it into position. |
