发明名称 UNDERFILL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: An underfill material is provided to decrease difference of thermal response behavior of a semiconductor device and an object, thereby manufacturing a semiconductor device with high reliability. CONSTITUTION: An underfill material satisfies storage elasticity(E')&lsqb;MPa&rsqb; after a thermal curing treatment at 175 &deg;C for 1 hour and satisfies a thermal expansion coefficient&lsqb;ppm/K&rsqb; of E'&times;&alpha;<250000&lsqb;Pa/K&rsqb; at 25 &deg;C. The storage elasticity(E') is 100-10,000pMPa. The thermal expansion coefficient is 10-200 &lsqb;ppm/K&rsqb;. The underfill material includes a thermoplastic resin and a thermosetting resin. The thermosetting resin includes an acryl resin. The thermosetting resin includes an epoxy resin and a phenol resin.
申请公布号 KR20130059291(A) 申请公布日期 2013.06.05
申请号 KR20120135046 申请日期 2012.11.27
申请人 NITTO DENKO CORPORATION 发明人 MORITA KOSUKE;TAKAMOTO NAOHIDE;SENZAI HIROYUKI
分类号 H01L23/29 主分类号 H01L23/29
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