发明名称 A PROGRESSIVE TRIMMING METHOD
摘要 <p>The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.</p>
申请公布号 EP2324491(B1) 申请公布日期 2013.06.05
申请号 EP20090811094 申请日期 2009.07.31
申请人 SOITEC 发明人 BROEKAART, MARCEL;MIGETTE, MARION;MOLINARI, SEBASTIEN;NEYRET, ERIC
分类号 H01L21/304;H01L21/762 主分类号 H01L21/304
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