发明名称 |
Dual power supply memory array with dynamic selection of the lowest voltage |
摘要 |
Disclosed is a memory array (100 figure 1) and associated method in which the lower of two supply voltages Vdd, Vcs from two power supplies is dynamically selected for bitline pre-charge operations. In the memory array, a voltage comparator (160 figure 3) compares the first supply voltage on a first power supply rail Vdd to a second supply voltage Vcs on a second power supply rail and outputs a voltage difference signal 165. If the voltage difference signal has a first value indicating that the first supply voltage is equal to or less than the second supply voltage, then a control circuit 150a ensures that the complementary bitlines 111a 111b connected to a memory cell 110 are pre-charged to the first supply voltage Vdd. If the voltage difference signal has a second value indicating that the first supply voltage is greater than the second supply voltage, then the control circuit ensures that the complementary bitlines are pre-charged to the second supply voltage Vcs. The selection process avoids stability faults due to power supply variation and noise, whilst allowing for reduced power consumption.
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申请公布号 |
GB2497180(A) |
申请公布日期 |
2013.06.05 |
申请号 |
GB20120020563 |
申请日期 |
2012.11.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HAROLD PILO;GEORGE MARIA BRACERAS;KIRK DAVID PETERSON |
分类号 |
G11C11/412;G11C5/14;G11C7/12;G11C11/417 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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