发明名称 Dual power supply memory array with dynamic selection of the lowest voltage
摘要 Disclosed is a memory array (100 figure 1) and associated method in which the lower of two supply voltages Vdd, Vcs from two power supplies is dynamically selected for bitline pre-charge operations. In the memory array, a voltage comparator (160 figure 3) compares the first supply voltage on a first power supply rail Vdd to a second supply voltage Vcs on a second power supply rail and outputs a voltage difference signal 165. If the voltage difference signal has a first value indicating that the first supply voltage is equal to or less than the second supply voltage, then a control circuit 150a ensures that the complementary bitlines 111a 111b connected to a memory cell 110 are pre-charged to the first supply voltage Vdd. If the voltage difference signal has a second value indicating that the first supply voltage is greater than the second supply voltage, then the control circuit ensures that the complementary bitlines are pre-charged to the second supply voltage Vcs. The selection process avoids stability faults due to power supply variation and noise, whilst allowing for reduced power consumption.
申请公布号 GB2497180(A) 申请公布日期 2013.06.05
申请号 GB20120020563 申请日期 2012.11.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 HAROLD PILO;GEORGE MARIA BRACERAS;KIRK DAVID PETERSON
分类号 G11C11/412;G11C5/14;G11C7/12;G11C11/417 主分类号 G11C11/412
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