METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a phase change memory device is provided to prevent the misalignment of an upper electrode and a phase change material layer by self-aligning the upper electrode and the phase change material layer. CONSTITUTION: A diode(121) and a first interlayer insulating layer(120) are formed on a substrate(110). A preliminary lower electrode layer and a preliminary interlayer insulating layer are formed on the first interlayer insulating layer. A first mask pattern and a second mask pattern are formed on the preliminary interlayer insulating layer. The preliminary interlayer insulating layer and the preliminary lower electrode layer are etched to form a storage element structure using the second mask pattern. A storage device(ST) is formed by successively laminating the storage element structure, a lower electrode layer(150), a phase change material layer(160), and an upper electrode layer(170).