| 摘要 |
A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials Æ TX1 , Æ TX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers Æ BG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier Æ BG to carriers as a higher output of a background light is detected by a photodetector. |
