发明名称 |
LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR |
摘要 |
Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer. |
申请公布号 |
EP2599133(A2) |
申请公布日期 |
2013.06.05 |
申请号 |
EP20110812684 |
申请日期 |
2011.05.02 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
SUH, DUK IL;KIM, JAE MOO;KIM, KYOUNG WAN;YOON, YEO JIN;KIM, YE SEUL;OH, SANG HYUN;LEE, JIN WOONG |
分类号 |
H01L33/10;H01L33/46 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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