| 摘要 |
<p>The present invention is related to a method for bonding a first substrate (2) having a front and back surface, and carrying a semiconductor device layer (1) on its front surface to a second substrate (20) having a front and back surface, said method comprising the steps of :
—� Producing said semiconductor device layer (1) on said front surface of said first substrate (2),
—� Depositing a first metal bonding layer or a stack of metal layers (11,12) on said first substrate, on top of said semiconductor device layer,
—� Depositing a second metal bonding layer or a stack of metal layers (11,12) on the front surface of said second substrate (20),
—� Establishing a metal bond between said first and second substrate, by bringing said first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining said metal bond,
—� Removing said first substrate (2),
wherein a metal stress-compensation layer (30) is deposited on the back side of said second substrate (20), before the step of establishing a metal bond between said first and second substrate (2,20).</p> |
