Production of mono-crystalline silicon

摘要

A method of producing mono-crystalline silicon comprises: providing a silicon seed layer of uniform crystalline orientation in a crucible; providing silicon feedstock above the seed layer; melting the silicon feedstock and an upper part of the seed layer, thereby creating molten silicon within the crucible; directionally solidifying the molten silicon to form a silicon ingot wherein the seed layer is arranged such that the solidification of the molten silicon occurs in a direction normal to a {110} crystallographic plane of the seed layer. The ingot may be formed into wafers, which may have an isotropic etching step applied to the surface. The etching process may involve HF or HNO3. The angle between the {110} plane of the seed layer and the floor of the crucible may be less than 15 degrees. A loaded crucible for performing the method is also disclosed.